s mhop microelectronics c orp. a STM6960A symbol v ds v gs i dm 62.5 w a p d c 2.0 -55 to 150 i d units parameter 60 4 14.5 c/w v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) @ vgs=4.5v 71 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.0 www.samhop.com.tw nov,29,2010 1 details are subject to change without notice. a t a =25 c t a =70 c a w 3.2 t a =70 c 1.28 dual n-channel enhancement mode field effect transistor g r e r r e n p p r p p o r r d so-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) 1 v 57 g fs 6.6 s c iss 820 pf c oss 53 pf c rss 40 pf q g 15 nc 12.5 20.5 19 t d(on) 14 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =2a v ds =5v,i d =2a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =48v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =1.7a 68 m ohm f=1.0mhz STM6960A www.samhop.com.tw nov,29,2010 2 1.9 3 v sd nc q gs nc q gd 1.7 3.3 gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =2a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 0.79 1.2 v nc 6.5 v ds =30v,i d =2a,v gs =10v v ds =30v,i d =2a,v gs =4.5v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ _ c c ver 1.0 92 71
STM6960A ver 1.0 www.samhop.com.tw nov,29,2010 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation tj, junction temperature( c) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 20 16 12 8 4 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =3v v gs =10v v gs =3.5v 120 100 80 60 40 20 0 v gs =10v v gs =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =2a v gs =4.5v i d =1.7a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 10 8 6 4 2 0 0 0.8 4.8 4.0 3.2 2.4 1.6 tj=125 c -55 c 25 c 0 v gs =4.5v v gs =4v 048121620
STM6960A ver 1.0 www.samhop.com.tw nov,29,2010 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current 0.1 1 10 60 10 1 0.1 0.01 80 v gs =10v single pulse t a =25 c 100 ms 1ms dc r d s (on) limit 10 m s 11 0 1 0 0 1 1 0 1 0 0 3 0 0 vds=30v,id=1a vgs=10v td( on) t r td( of f ) tf 150 125 100 75 50 25 0 24 68 10 0 i d =2a 125 c 75 c 25 c 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 125 c 75 c ciss coss crss 1200 1000 800 600 400 200 0 10 15 20 25 30 0 5 10 0 us 10 8 6 4 2 0 024 6 81012 14 16 v ds =30v i d =2a is, source-drain current(a)
STM6960A ver 1.0 www.samhop.com.tw nov,29,2010 5 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance p dm t 1 t 2 1. r ? ja (t)=r (t) * r ? ja 2. r ? ja =s ee datas heet 3. t jm- t a =p dm *r ? ja (t) 4. duty cycle, d=t 1 /t 2 single pulse
STM6960A www.samhop.com.tw nov,29,2010 6 ver 1.0 package outline dimensions so-8 symbols min min 0.004 0.189 0 1.35 0.10 1.25 0.17 4.80 3.70 0 max max 0.069 0.010 0.064 0.010 0.197 0.157 8 1.75 0.25 1.63 0.25 5.00 4.00 8 millimeters inches 1 e d a a1 b e h l hx45 o a a1 a2 c d e e h l h 1.27 ref. 5.80 6.20 0.40 1.27 0.25 0.50 0.050 bsc 0.228 0.244 0.010 a2 c b 0.020 0.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020
STM6960A www.samhop.com.tw nov,29,2010 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 2 0.15 5.25 2 0.10 2.10 2 0.10 ? 1.5 (min) ? 1.55 2 0.10 12.0 +0.3 - 0.1 1.75 2 0.10 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 -0.4 ? 12.75 +0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a terminal number 1 w1 m n w g v r s k h ver 1.0
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